University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Midinfrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs

Nash, G R, Smith, S J, Coomber, S D, Przeslak, S, Andreev, A, Carrington, P, Yin, M, Krier, A, Buckle, L, Emeny, M T and Ashley, T (2007) Midinfrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs Applied Physics Letters, 91 (13).


Download (293kB)


The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of similar to 3.5 mu m, threshold current density of 115 A/cm(2), and with a characteristic temperature T-0 similar to 51 K.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
Nash, G R
Smith, S J
Coomber, S D
Przeslak, S
Carrington, P
Yin, M
Krier, A
Buckle, L
Emeny, M T
Ashley, T
Date : 1 January 2007
DOI : 10.1063/1.2793821
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 91, Iss. 13. Copyright 2007 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 16 Jan 2019 16:18

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800