Midinfrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs
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Nash, G R, Smith, S J, Coomber, S D, Przeslak, S, Andreev, A, Carrington, P, Yin, M, Krier, A, Buckle, L, Emeny, M T and Ashley, T (2007) Midinfrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs Applied Physics Letters, 91 (13). ISSN 00036951
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Abstract
The realization of midinfrared GaInSb/AlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of similar to 3.5 mu m, threshold current density of 115 A/cm(2), and with a characteristic temperature T-0 similar to 51 K.
| Item Type: | Article |
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| Additional Information: | Published in <i>Applied Physics Letters,</i> Vol. 91, Iss. 13. Copyright 2007 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 189 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:06 |
| Last Modified: | 21 Sep 2012 14:58 |
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