University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Enhanced Nonradiative Auger Recombination in P-Type Modulation Doped InAs/GaAs Quantum Dots

Jang, Y D, Badcock, T J, Mowbray, D J, Skolnick, M S, Park, J, Lee, D, Liu, H Y, Hopkinson, M, Hogg, R A and Andreev, A D (2008) Enhanced Nonradiative Auger Recombination in P-Type Modulation Doped InAs/GaAs Quantum Dots Applied Physics Letters, 93 (10). ISSN 00036951

[img]
Preview
PDF
fulltext.pdf

Download (194kB)

Abstract

The photoluminescence efficiency and carrier recombination time of p-type modulation doped InAs/GaAs quantum dots (QDs) have been measured as a function of doping density. At 10 K the carrier lifetime decreases from 1200 to 350 ps over the doping range of 0 and 30 acceptors/QD. This behavior is attributed to an enhancement of the Auger-type recombination due to the presence of extrinsic holes in the QDs. The hole density dependence of the Auger process is found to be weaker than in bulk semiconductors and quantum wells (QWs). (c) 2008 American Institute of Physics.

Item Type: Article
Additional Information: Published in <i>Applied Physics Letters,</i> Vol. 93, Iss. 10. Copyright 2008 American Institute of Physics. Click <a href=http://apl.aip.org/ >here</a> to access the journal's website.
Divisions: Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:06
Last Modified: 23 Sep 2013 18:26
URI: http://epubs.surrey.ac.uk/id/eprint/183

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800