Enhanced Nonradiative Auger Recombination in P-Type Modulation Doped InAs/GaAs Quantum Dots
Jang, Y D, Badcock, T J, Mowbray, D J, Skolnick, M S, Park, J, Lee, D, Liu, H Y, Hopkinson, M, Hogg, R A and Andreev, A D (2008) Enhanced Nonradiative Auger Recombination in P-Type Modulation Doped InAs/GaAs Quantum Dots Applied Physics Letters, 93 (10).
The photoluminescence efficiency and carrier recombination time of p-type modulation doped InAs/GaAs quantum dots (QDs) have been measured as a function of doping density. At 10 K the carrier lifetime decreases from 1200 to 350 ps over the doping range of 0 and 30 acceptors/QD. This behavior is attributed to an enhancement of the Auger-type recombination due to the presence of extrinsic holes in the QDs. The hole density dependence of the Auger process is found to be weaker than in bulk semiconductors and quantum wells (QWs). (c) 2008 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||1 January 2008|
|Identification Number :||10.1063/1.2975961|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 93, Iss. 10. Copyright 2008 American Institute of Physics. Click <a href=http://apl.aip.org/ >here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:06|
|Last Modified :||23 Sep 2013 18:26|
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