Spin lifetime in high quality InSb epitaxial layers grown on GaAs
Litvinenko, K. L., Nikzad, L., Allam, J., Murdin, B. N., Pidgeon, C. R., Harris, J. J., Zhang, T. and Cohen, L. F. (2007) Spin lifetime in high quality InSb epitaxial layers grown on GaAs Journal of Applied Physics, 083105 (2007).
The spin relaxation in undoped InSb films grown on GaAs has been investigated in the temperature range from 77 to 290 K. Two distinct lifetime values have been extracted, 1 and 2.5 ps, dependent on film thickness. Comparison of this data with a multilayer transport analysis of the films suggests that the longer time (~2.5 ps at 290 K) is associated with the central intrinsic region of the film, while the shorter time (~1 ps) is related to the highly dislocated accumulation region at the film-substrate interface. Whereas previous work on InAs films grown on GaAs showed that the native surface defect resulted in an additional charge accumulation layer with high conductivity but very short spin lifetime, in InSb layers the surface states introduce a depletion region. We infer that InSb could be a more attractive candidate for spintronic applications than InAs.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||15 April 2007|
|Identification Number :||https://doi.org/10.1063/1.2719017|
|Additional Information :||K. L. Litvinenko et al., Journal of Applied Physics, 101, 083105 (2007). Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:35|
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