Dopant-Stress Synergy in Si Solid-Phase Epitaxy
Rudawski, N G, Jones, K S and Gwilliam, R (2008) Dopant-Stress Synergy in Si Solid-Phase Epitaxy Applied Physics Letters, 92 (23).
The influence of dopants on stressed solid-phase epitaxy of Si was studied in B-doped material up to B concentration of similar to 3.0 x 10(20) cm(-3) and stress of 1.0 +/- 0.1 GPa. As per the generalized Fermi level shifting model of growth enhancement in the presence of electrically active impurities, it is advanced that application of compressive stress may decreases the energy difference between intrinsic Fermi and acceptor levels thus making dopant and stress effects synergistic in growth kinetics. (C) 2008 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||1 January 2008|
|Identification Number :||10.1063/1.2945291|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 92, Iss. 23. Copyright 2008 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's webpage.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:06|
|Last Modified :||23 Sep 2013 18:26|
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