Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers
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Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.
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Abstract
We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3mum GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, Condensed Matter, Physics |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| Related URLs: | |
| ID Code: | 1794 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 26 Oct 2012 17:14 |
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