Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers
Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.
We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3mum GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 January 2004|
|Identification Number :||https://doi.org/10.1109/ISLC.2004.1382767|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, Condensed Matter, Physics|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:35|
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