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Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers

Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

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Abstract

We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3mum GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
AuthorsEmail
Fehse, RUNSPECIFIED
Sweeney, SJUNSPECIFIED
Adams, ARUNSPECIFIED
McConville, DUNSPECIFIED
Riechert, HUNSPECIFIED
Geelhaar, LUNSPECIFIED
Date : 1 January 2004
Identification Number : 10.1109/ISLC.2004.1382767
Contributors :
ContributionNameEmail
EditorMesse, KUNSPECIFIED
PublisherIEEE, UNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, Condensed Matter, Physics
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:44
Last Modified : 23 Sep 2013 18:35
URI: http://epubs.surrey.ac.uk/id/eprint/1794

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