Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers
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Sweeney, SJ and Thijs, PJA (2003) Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.
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Abstract
High temperature degradation of the efficiency of 1.5 mum InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Engineering |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| Related URLs: | |
| ID Code: | 1793 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 26 Oct 2012 17:14 |
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