Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers
Sweeney, SJ and Thijs, PJA (2003) Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.
High temperature degradation of the efficiency of 1.5 mum InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 January 2003|
|Uncontrolled Keywords :||Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Engineering|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:35|
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