University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers

Sweeney, SJ and Thijs, PJA (2003) Origin of the high temperature performance degradation of 1.5 mu m InGaAs(P)/InP quantum well lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

[img]
Preview
PDF
fulltext.pdf

Download (127kB)

Abstract

High temperature degradation of the efficiency of 1.5 mum InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Engineering
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:44
Last Modified: 23 Sep 2013 18:35
URI: http://epubs.surrey.ac.uk/id/eprint/1793

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800