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Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers

Marko, IP, Adams, AR, Sweeney, SJ, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

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Abstract

We show that even in quantum dot lasers with very low threshold current density (Jth=740-50 A/cm(2) at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises similar to60-70% of Jth at 300 K.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
AuthorsEmail
Marko, IPUNSPECIFIED
Adams, ARUNSPECIFIED
Sweeney, SJUNSPECIFIED
Sellers, IRUNSPECIFIED
Mowbray, DJUNSPECIFIED
Skolnick, MSUNSPECIFIED
Liu, HYUNSPECIFIED
Groom, KMUNSPECIFIED
Date : 1 January 2004
Identification Number : 10.1109/ISLC.2004.1382753
Contributors :
ContributionNameEmail
EditorMesse, KUNSPECIFIED
PublisherIEEE, UNSPECIFIED
Uncontrolled Keywords : Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, Condensed Matter, Physics
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:44
Last Modified : 23 Sep 2013 18:35
URI: http://epubs.surrey.ac.uk/id/eprint/1789

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