Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers
Marko, IP, Adams, AR, Sweeney, SJ, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.
We show that even in quantum dot lasers with very low threshold current density (Jth=740-50 A/cm(2) at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises similar to60-70% of Jth at 300 K.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 January 2004|
|Identification Number :||https://doi.org/10.1109/ISLC.2004.1382753|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, Condensed Matter, Physics|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:35|
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