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Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers

Marko, Igor, Adams, Alfred, Sweeney, Stephen, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.


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We show that even in quantum dot lasers with very low threshold current density (Jth=740-50 A/cm(2) at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises similar to60-70% of Jth at 300 K.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
Sellers, IR
Mowbray, DJ
Skolnick, MS
Liu, HY
Groom, KM
Date : 1 January 2004
DOI : 10.1109/ISLC.2004.1382753
Copyright Disclaimer : Copyright 2004 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Contributors :
ContributionNameEmailORCID, K,
Uncontrolled Keywords : Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, Condensed Matter, Physics
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:44
Last Modified : 06 Jul 2019 05:07

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