Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers
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Marko, IP, Adams, AR, Sweeney, SJ, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.
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Abstract
We show that even in quantum dot lasers with very low threshold current density (Jth=740-50 A/cm(2) at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises similar to60-70% of Jth at 300 K.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, Condensed Matter, Physics |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| Related URLs: | |
| ID Code: | 1789 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 26 Oct 2012 17:14 |
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