Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness
Califano, Marco, Vinh, N. Q., Phillips, P. J., Ikonić, Z., Kelsall, R. W., Harrison, P., Pidgeon, C. R., Murdin, B. N., Paul, D. J., Townsend, P., Zhang, J., Ross, I. M. and Cullis, A.G. (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness Physical Review B, 75 (045338).
We report the direct determination of nonradiative lifetimes in Si/SiGe asymmetric quantum well structures designed to access spatially indirect (diagonal) interwell transitions between heavy-hole ground states, at photon energies below the optical phonon energy. We show both experimentally and theoretically, using a six-band k·p model and a time-domain rate equation scheme, that, for the interface quality currently achievable experimentally (with an average step height 1 greater than or equal to Å), interface roughness will dominate all other scattering processes up to about 200 K. By comparing our results obtained for two different structures we deduce that in this regime both barrier and well widths play an important role in the determination of the carrier lifetime. Comparison with recently published experimental and theoretical data obtained for mid-infrared GaAs/AlxGa1−xAs multiple quantum well systems leads us to the conclusion that the dominant role of interface roughness scattering at low temperature is a general feature of a wide range of semiconductor heterostructures not limited to IV-IV materials.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||24 January 2007|
|Identification Number :||10.1103/PhysRevB.75.045338|
|Additional Information :||Published in Physical Review B, 75, 045338. © 2007 The American Physical Society.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:35|
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