Double-resonance spectroscopy of InAsÕGaAs self-assembled quantum dots
Murdin, B. N., Hollingworth, A. R., Barker, J. A., Clarke, D. G., Findlay, P. C., Pidgeon, C. R., Wells, J.-P. R., Bradley, I. V., Malik, S. and Murray, R. (2000) Double-resonance spectroscopy of InAsÕGaAs self-assembled quantum dots Physical Review B, 62 (12).
We present far-/near-infrared double resonance measurements of self-assembled InAs/GaAs quantum dots. The far-infrared resonance is unambiguously associated with a bound-bound intraband transition in the neutral dots. The results show that the interband photoluminescence (PL) lines originate from conduction levels with successively increasing in-plane quantum numbers. We determine the confinement energies for both electrons and holes in the same dots. Furthermore, we show that the inhomogeneous broadening of the PL cannot be attributed solely to size and composition fluctuation.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||15 September 2000|
|Identification Number :||https://doi.org/10.1103/PhysRevB.62.R7755|
|Related URLs :|
|Additional Information :||Published in Physical Review B, 62, R7755 - R7758 . Copyright 2000 The American Physical Society.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:35|
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