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Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers

Sweeney, SJ, Fehse, R, Adams, AR and Riechert, H (2003) Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

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Abstract

The apparent temperature stability of GaInNAs-based lasers is-attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Engineering
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:44
Last Modified: 23 Sep 2013 18:35
URI: http://epubs.surrey.ac.uk/id/eprint/1782

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