Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers
Sweeney, SJ, Fehse, R, Adams, AR and Riechert, H (2003) Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.
The apparent temperature stability of GaInNAs-based lasers is-attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 January 2003|
|Uncontrolled Keywords :||Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Engineering|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:35|
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