Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers
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Sweeney, SJ, Fehse, R, Adams, AR and Riechert, H (2003) Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.
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Abstract
The apparent temperature stability of GaInNAs-based lasers is-attributed to significant defect current. By removing this current, GaInNAs devices have a similar temperature dependence to InGaAsP devices whilst AlGaInAs devices are more thermally stable.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Engineering |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| Related URLs: | |
| ID Code: | 1782 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 26 Oct 2012 17:14 |
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