Auger recombination in long-wavelength infrared InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> alloys
Murdin, B. N., Kamal-Saadi, M., Lindsay, A., O'Reilly, E. P., Adams, A. R., Nott, G. J., Crowder, J. G., Pidgeon, C. R., Bradley, I. V., Wells, J-P. R., Burke, T., Johnson, A. D. and Ashley, T. (2001) Auger recombination in long-wavelength infrared InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> alloys Applied Physics Letters, 1568 (2001). ISSN 00036951
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Abstract
<p>Dilute nitrogen alloys of InSb exhibit strong band gap bowing with increasing nitrogen composition, shifting the absorption edge to longer wavelengths. The conduction band dispersion also has an enhanced nonparabolicity, which suppresses Auger recombination. We have measured Auger lifetimes in alloys with 11 and 15 µm absorption edges using a time-resolved pump-probe technique. We find the lifetimes to be longer at room temperature than equivalent band gap Hg<i><sub>1–y</i></sub>Cd<i><sub>y</i><//sub>Te alloys at the same quasi-Fermi level separation. The results are explained using a modified <b>k·p</b> Hamiltonian which explicitly includes interactions between the conduction band and a higher lying nitrogen-related resonant band.</p>
| Item Type: | Article |
|---|---|
| Additional Information: | B. N. Murdin et al., Appl. Phys. Lett. 78, 1568 (2001). Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1778 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 25 Apr 2013 12:43 |
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