The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers
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Masse, NF, Marko, IP, Sweeney, SJ, Adams, AR, Hatori, N and Sugarawa, M (2005) The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers
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Abstract
We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects, this is responsible for the temperature insensitive operation as observed around room temperature in these lasers.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| ID Code: | 1777 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 26 Oct 2012 17:15 |
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