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The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers

Masse, NF, Marko, IP, Sweeney, SJ, Adams, AR, Hatori, N and Sugarawa, M (2005) The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers

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Abstract

We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects, this is responsible for the temperature insensitive operation as observed around room temperature in these lasers.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:44
Last Modified: 23 Sep 2013 18:34
URI: http://epubs.surrey.ac.uk/id/eprint/1777

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