Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures
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Jin, S. R., Sweeney, S. J., Ahmad, C. N., Adams, A. R. and Murdin, B. N. (2004) Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures Applied Physics Letters, 357 (2004). ISSN 00036951
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Abstract
We report on the pressure dependence of the threshold current in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured at low temperatures ~100 K. It was found that the threshold current of both devices slowly increases with increasing pressure (i.e., increasing band gap) at ~100 K consistent with the calculated variation of the radiative current. In contrast, at room temperature we observed a reduction of the threshold current with increasing pressure. Our low-temperature, high-pressure data confirm the results of previous atmospheric pressure measurements on the same devices which indicated a transition in the dominant recombination mechanism from radiative to Auger as the device temperature is increased from ~100 to 300 K
| Item Type: | Article |
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| Additional Information: | S. R. Jin et al., Applied Physics Letters, 85, 357(2004). Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1772 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 25 Apr 2013 12:43 |
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