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Drift mobility and mobility-lifetime products in CdTe : Cl grown by the travelling heater method

Sellin, PJ, Davies, AW, Lohstroh, A, Ozsan, ME and Parkin, J (2005) Drift mobility and mobility-lifetime products in CdTe : Cl grown by the travelling heater method IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52 (6). 3074 - 3078. ISSN 0018-9499


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We report the electron and hole charge transport properties of semi insulating CdTe:Cl grown by the Travelling Heater Method (THM). An alpha-particle Time of Flight (TOF) method was used to measure electron and hole drift mobility, with room temperature values of 880 cm(2)/Vs for electrons and 90 cm(2)/Vs for holes. The variation in mobility was also investigated as a function of temperature, with electron and hole mobilities at 190 K of 1150 cm(2)/Vs and 20 cm(2)/Vs respectively. Using a Hecht analysis the electron and hole mobility-lifetime products were also measured over the same temperature range, with values at room temperature of 8 x 10(-4) cm(2)/V and 7 x 10(-5) cm(2)/V respectively. Time-resolved ion beam induced charge (IBIC) imaging was used to produce micrometer resolution maps of electron drift mobility and signal amplitude, which showed excellent spatial uniformity.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Technology, Engineering, Electrical & Electronic, Nuclear Science & Technology, Engineering, cadmium telluride, charge transport, time of flight, TRANSPORT-PROPERTIES, RADIATION DETECTORS, CDZNTE
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Divisions: Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:06
Last Modified: 23 Sep 2013 18:26

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