Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers
Marko, IP, Adams, AR, Sweeney, SJ, Mowbray, DJ, Skolnick, MS, Liu, HYY and Groom, KM (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.
We show that even in quantum-dot (QD) lasers with very low threshold current densities (J(th) = 40-50 A/cm(2) at 300 K), the temperature sensitivity of the threshold current arises from nonradiative recombination that comprises similar to 60% to 70% of J(th) at 300 K, whereas the radiative part of J(th) is almost temperature insensitive. The influence of the nonradiative recombination mechanism decreases with increasing hydrostatic pressure and increasing band gap, which leads to a decrease of the threshold current. We also studied, for the first time, the band gap dependence of the radiative part Of Jth, which in contrast increases strongly with increasing band gap. These results suggest that Auger recombination is an important intrinsic recombination mechanism for 1.3-mu m lasers, even in a very low threshold QD device, and that it is responsible for the temperature sensitivity of the threshold current.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, characteristic temperature, hydrostatic high pressure, IrAs, quantum dot (QD), recombination mechanisms, semiconductor laser, threshold current, 1.3 MU-M, TEMPERATURE-DEPENDENCE, CURRENT-DENSITY, AUGER RECOMBINATION, OPTICAL-PROPERTIES, ROOM-TEMPERATURE, ACTIVE-REGION, HIGH-POWER, PERFORMANCE, GAIN|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:44|
|Last Modified:||23 Sep 2013 18:34|
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