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Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers

Marko, Igor, Adams, Alfred, Sweeney, Stephen, Mowbray, DJ, Skolnick, MS, Liu, HYY and Groom, KM (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

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Abstract

We show that even in quantum-dot (QD) lasers with very low threshold current densities (J(th) = 40-50 A/cm(2) at 300 K), the temperature sensitivity of the threshold current arises from nonradiative recombination that comprises similar to 60% to 70% of J(th) at 300 K, whereas the radiative part of J(th) is almost temperature insensitive. The influence of the nonradiative recombination mechanism decreases with increasing hydrostatic pressure and increasing band gap, which leads to a decrease of the threshold current. We also studied, for the first time, the band gap dependence of the radiative part Of Jth, which in contrast increases strongly with increasing band gap. These results suggest that Auger recombination is an important intrinsic recombination mechanism for 1.3-mu m lasers, even in a very low threshold QD device, and that it is responsible for the temperature sensitivity of the threshold current.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
NameEmailORCID
Marko, IgorI.Marko@surrey.ac.ukUNSPECIFIED
Adams, AlfredAlf.Adams@surrey.ac.ukUNSPECIFIED
Sweeney, StephenS.Sweeney@surrey.ac.ukUNSPECIFIED
Mowbray, DJUNSPECIFIEDUNSPECIFIED
Skolnick, MSUNSPECIFIEDUNSPECIFIED
Liu, HYYUNSPECIFIEDUNSPECIFIED
Groom, KMUNSPECIFIEDUNSPECIFIED
Date : 1 September 2005
Identification Number : 10.1109/JSTQE.2005.853847
Copyright Disclaimer : Copyright 2005 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/PBLIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, characteristic temperature, hydrostatic high pressure, IrAs, quantum dot (QD), recombination mechanisms, semiconductor laser, threshold current, 1.3 MU-M, TEMPERATURE-DEPENDENCE, CURRENT-DENSITY, AUGER RECOMBINATION, OPTICAL-PROPERTIES, ROOM-TEMPERATURE, ACTIVE-REGION, HIGH-POWER, PERFORMANCE, GAIN
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:44
Last Modified : 31 Oct 2017 14:03
URI: http://epubs.surrey.ac.uk/id/eprint/1769

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