Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures
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Ganichev, S. D., Schneider, Petra, Bel'kov, V. V., Ivchenko, E. L., Tarasenko, S. A., Wegscheider, W., Weiss, D., Schuh, D., Murdin, B. N., Phillips, P. J., Pidgeon, C. R., Clarke, D. G., Merrick, M., Murzyn, P., Beregulin, E. V. and Prettl, W. (2003) Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures Physical Review B, 68 (081302). ISSN 0163-1829
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Abstract
Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.
| Item Type: | Article |
|---|---|
| Additional Information: | Published in Physical Review B, 68, 081302. © 2003 The American Physical Society. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1767 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 25 Apr 2013 12:43 |
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