Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures
Ganichev, S. D., Schneider, Petra, Bel'kov, V. V., Ivchenko, E. L., Tarasenko, S. A., Wegscheider, W., Weiss, D., Schuh, D., Murdin, B. N., Phillips, P. J., Pidgeon, C. R., Clarke, D. G., Merrick, M., Murzyn, P., Beregulin, E. V. and Prettl, W. (2003) Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures Physical Review B, 68 (081302).
Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||29 August 2003|
|Identification Number :||https://doi.org/10.1103/PhysRevB.68.081302|
|Additional Information :||Published in Physical Review B, 68, 081302. © 2003 The American Physical Society.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:34|
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