Design of power FETs based on coupled electro-thermal electromagnetic modeling
Denis, D, Snowden, CM and Hunter, IC (2005) Design of power FETs based on coupled electro-thermal electromagnetic modeling In: IEEE MTT-S International Microwave Symposium, 2005-06-11 - 2005-06-17, Long Beach, CA.
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A comprehensive modeling approach is applied to the study of pHEMT transistors for microwave power amplifier applications. This approach combines physical, electromagnetic and thermal simulations to model large power transistors used in these applications, allowing both the individual finger contribution and the global performance to be investigated in an efficient manner, which can be used with commercial CAD tools. In this way the design of the transistor structure contributes to the optimization of the RF performances of the complete amplifier. Discrete transistor and MMIC designs are investigated using this work with validation based on infra-read and microwave measurements.
|Item Type:||Conference or Workshop Item (Paper)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Identification Number :||10.1109/MWSYM.2005.1516629|
|Uncontrolled Keywords :||power transistor model, physical, electromagnetic and thermal simulations, HETEROJUNCTION BIPOLAR-TRANSISTORS|
|Additional Information :||
Copyright 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
|Depositing User :||Symplectic Elements|
|Date Deposited :||28 Nov 2011 15:57|
|Last Modified :||23 Sep 2013 18:53|
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