Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments
Rauter, P., Fromherz, T., Bauer, G., Vinh, N. Q., Murdin, B. N., Phillips, J. P., Pidgeon, C. R., Diehl, L., Dehlinger, G. and Grützmacher, D. (2006) Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments Applied Physics Letters, 211111 (2006).
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser (wavelength 7.9 µm). Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||20 November 2006|
|Identification Number :||https://doi.org/10.1063/1.2397004|
|Additional Information :||P. Rauter et al., Appl. Phys. Lett. 89, 211111 (2006). Copyright (2006) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||23 Sep 2013 18:34|
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