Band anticrossing in dilute InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub>
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Murdin, B. N., Adams, A. R., Murzyn, P., Pidgeon, C. R., Bradley, I. V., Wells, J-P. R., Matsuda, Y. H., Miura, N., Burke, T. and Johnson, A. D. (2002) Band anticrossing in dilute InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> Applied Physics Letters, 256 (2002). ISSN 00036951
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Abstract
<p>Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen within the conduction band and the extended states of the conduction band itself. This also results in the conduction band dispersion having an enhanced nonparabolicity. We have measured the electron effective mass near the anticrossing by cyclotron resonance in InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> alloys with absorption edge near 15 µm, using pulsed fields up to 150 T. The results directly demonstrate the band anticrossing and quantitatively confirm the increase of effective mass versus <i>x</i> predicted for InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> by a tight binding calculation for low nitrogen concentration (<i>x</i><0.01).</p>
| Item Type: | Article |
|---|---|
| Additional Information: | B. N. Murdinet al., Applied Physics Letters, 81, 256 (2002). Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1764 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 25 Apr 2013 12:43 |
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