Band gap reduction in GaNSb alloys due to the anion mismatch
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Veal, T. D., Piper, L. F. J., Jollands, S., Bennett, B. R., Jefferson, P. H., Thomas, P. A., McConville, C. F., Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T. (2005) Band gap reduction in GaNSb alloys due to the anion mismatch Applied Physics Letters, 132101 (2005). ISSN 00036951
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Abstract
<p>The structural and optoelectronic properties in GaN<i><sub>x</i></sub>Sb<sub>1−<i>x</i></sub> alloys (0≤<i>x</i><0.02) grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer layers on GaAs substrates are investigated. High-resolution x-ray diffraction (XRD) and reciprocal space mapping indicate that the GaN<i><sub>x</i></sub>Sb<sub>1−<i>x</i></sub> epilayers are of high crystalline quality and the alloy composition is found to be independent of substrate, for identical growth conditions. The band gap of the GaNSb alloys is found to decrease with increasing nitrogen content from absorption spectroscopy. Strain-induced band-gap shifts, Moss-Burstein effects, and band renormalization were ruled out by XRD and Hall measurements. The band-gap reduction is solely due to the substitution of dilute amounts of highly electronegative nitrogen for antimony, and is greater than observed in GaNAs with the same N content.</p>
| Item Type: | Article |
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| Additional Information: | T. D. Veal et al., Applied Phsyics Letters, 87, 132101(2005). Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1760 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 25 Apr 2013 12:43 |
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