Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer
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Thomson, D, Gardes, FY, Mashanovich, GZ, Knights, AP and Reed, GT (2008) Using SiO2 carrier confinement in total internal reflection optical switches to restrict carrier diffusion in the guiding layer JOURNAL OF LIGHTWAVE TECHNOLOGY, 26 (9-12). 1288 - 1294. ISSN 0733-8724
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Abstract
Total internal reflection optical switches structures are well known. However, previously reported switches based upon carrier injection have suffered from the diffusion of carriers within the guiding layer leading to inefficient reflection. While some attempts have been made to restrict the diffusion of carriers in devices fabricated in materials other than silicon, carrier diffusion has still been possible. In this paper, we propose the use of a thin SiO2 barrier around the carrier injection region to improve the performance of the device. Modeling data has shown that high-performance switching is possible by confining the carriers in this way. Modeling suggests that switching times of the order of 5 ns can be achieved with a switching current of the order of 30 mA.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Telecommunications, Engineering, carrier confinement, optical switch, silicon photonics, total internal reflection, WAVE-GUIDE, PLASMA DISPERSION, SILICON, OXIDATION |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| ID Code: | 1759 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 08 Jun 2013 15:08 |
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