Spin relaxation in InSb and InAs by 1-and 2-colour spectroscopy with free electron and solid state lasers
Pidgeon, CR, Murzyn, P, Phillips, PJ, Murdin, BN, Litvinenko, K, Merrick, M, Cohen, LF, Zhang, T, Clowes, SK, Buckle, P, Ashley, T, Thumm, M and Wiesbeck, W (2004) Spin relaxation in InSb and InAs by 1-and 2-colour spectroscopy with free electron and solid state lasers In: Joint 29th International Conference on Infrared and Millimeter Waves/12th International Conference on Terahertz Electronics, 2004-09-17 - 2004-10-01, Univ Karlsruhe, Karlsruhe, GERMANY.
We report time-resolved measurement of spin lifetimes in both bulk and quantum well narrow gap semiconductors (NGSs) at 300K. We have used both free electron and solid state laser sources from 3 to 7 pm and quarter wave plates to produce circularly polarised pump and probe beams. We previously demonstrated that spin flip (Elliott-Yafet, EY) scattering dominates in Hg0.78Cd0.22Te due to strong lattice scattering. In contrast, spin unphasing (D'Yakonov-Perel, DP) scattering controls the loss of polarisation in intrinsic InSb and InAs due to the higher mobility, giving spin lifetimes, tau(s), of similar to 20ps at 300K. We report first measurements of tau(s), of similar to 17ps in InSb/InAlSb quantum wells.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, SEMICONDUCTORS|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
Faculty of Engineering and Physical Sciences > Physics
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:44|
|Last Modified:||02 May 2013 02:33|
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