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High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 µm

Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. and Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 µm Applied Physics Letters, 1149 (2003). ISSN 00036951

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Abstract

The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 µm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs.

Item Type: Article
Additional Information: S. A. Choulis et al., Appl. Phys. Lett. 82, 1149 (2003) . Copyright (2003) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:44
Last Modified: 23 Sep 2013 18:34
URI: http://epubs.surrey.ac.uk/id/eprint/1756

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