Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers
Sweeney, SJ, McConville, D, Jin, SR, Ahmad, CN, Masse, NF, Bouyssou, RX, Adams, AR and Hanke, C (2004) Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers In: 16th International Conference on Indium Phosphide and Related Materials, 2004-05-31 - 2004-06-04, Kagoshima, JAPAN.
The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigated using a combination of low temperature and high pressure techniques. The results indicate that this is due to lower nonradiative Auger recombination in the InGaAlAs devices because of the higher conduction band offset made possible with the InGaAlAs system which results in a lower hole density in the quantum wells at threshold.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:44|
|Last Modified:||26 Oct 2012 17:14|
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