Introducing carrier localisation in total internal reflection optical switches to restrict carrier diffusion in the guiding layer
Thomson, D, Reed, GT, Gardes, FY, Mashanovich, GZ and Howe, S (2006) Introducing carrier localisation in total internal reflection optical switches to restrict carrier diffusion in the guiding layer In: 3rd International Conference on Group IV Photonics, 2006-09-13 - 2006-09-15, Ottawa, CANADA.
Previous total internal reflection based switches have suffered from the diffusion of carriers in the guiding layer leading to inefficient reflection and carrier injection. In our proposed device this problem is overcome by using a SiO2 barrier.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Crystallography, Optics, RAPID THERMAL-OXIDATION, PLASMA DISPERSION|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:44|
|Last Modified:||08 Jun 2013 16:08|
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