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Dislocation engineered silicon for light emission

Homewood, KP, Lourenco, MA, Milosavljevic, M, Shao, G and Gwilliam, RM (2005) Dislocation engineered silicon for light emission

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Abstract

The paper outlined a new approach on dislocation engineering to make efficient light emitting diodes in silicon using otherwise conventional silicon processing. DELED (dislocation engineered light emitting diodes)was fabricated with erbium incorporated in the active region. Progress on tuning these devices from 1.5 to 1.6 mum by incorporation of additional optically active centres was demonstrated

Item Type: Conference or Workshop Item (UNSPECIFIED)
Uncontrolled Keywords: ROOM-TEMPERATURE, EMITTING DIODE
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:44
Last Modified: 23 Sep 2013 18:34
URI: http://epubs.surrey.ac.uk/id/eprint/1752

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