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Source-gated transistors for improved current-mode pixel drivers

Sporea, RA, Shannon, JM, Silva, SRP and Guo, X Source-gated transistors for improved current-mode pixel drivers In: SID Asia Display / China Display 2011, 2011-11-06 - 2011-11-09, Kunshan, China.

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Emissive displays require high-efficiency linear drivers which are stable under electrical stress and can deliver uniform performance across a large area. Owing to their low saturation voltage and flat saturation characteristic, source-gated transistors (SGTs) are ideally suited to act as power-efficient driving transistors in active matrix backplanes for lighting, low-power signage and display screens. It is shown that SGTs are also very stable during electrical stress. The technology is compatible with standard TFT fabrication allowing FET and SGT devices to be integrated in the same design and fabrication run.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
Sporea, RA
Shannon, JM
Silva, SRP
Guo, X
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 15:02
Last Modified : 31 Oct 2017 14:22

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