Toward Silicon-Based Lasers for Terahertz Sources
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Lynch, Stephen A., Paul, Douglas J., Townsend, Paul, Matmon, Guy, Suet, Zhang, Kelsall, Robert W., Ikonic, Zoran, Harrison, Paul, Zhang, Jing, Norris, David J., Cullis, Anthony G., Pidgeon, Carl R., Murzyn, Pawel, Murdin, Ben, Bain, Mike, Gamble, Harry S., Zhao, Ming and Ni, Wei-Xin (2006) Toward Silicon-Based Lasers for Terahertz Sources IEEE Journal of Selected Topics in Quantum Electronics, 12 (6). pp. 1570-1578. ISSN 1077-260X
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Abstract
Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried silicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser
| Item Type: | Article |
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| Additional Information: | In IEEE Journal of Selected Topics in Quantum Electronics, 12, , 1570-1578.© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1746 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 25 Apr 2013 12:43 |
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