Recent developments in compound semiconductor microwave power transistor technology
Snowden, CM (2004) Recent developments in compound semiconductor microwave power transistor technology In: 15th International Symposium on Power Semiconductor Devices and Integrated Circuits, 2003-04-14 - 2003-04-17, Cambridge, England.
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Official URL: http://dx.doi.org/10.1049/ip-cds:20040453
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum designs. A new high yield power GaAs pHEMT process is described and the application of this technology to multi-carrier microwave power amplifiers is discussed, achieving state-of-the-art performance, with output powers of up to 120 W with 70% efficiency at 2.1 GHz.
|Item Type:||Conference or Workshop Item (Paper)|
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|Uncontrolled Keywords:||MODEL, HEMTS|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Deposited By:||Symplectic Elements|
|Deposited On:||28 Nov 2011 14:57|
|Last Modified:||16 Feb 2013 15:59|
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