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Recent developments in compound semiconductor microwave power transistor technology

Snowden, CM (2004) Recent developments in compound semiconductor microwave power transistor technology In: 15th International Symposium on Power Semiconductor Devices and Integrated Circuits, 2003-04-14 - 2003-04-17, Cambridge, England.

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This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum designs. A new high yield power GaAs pHEMT process is described and the application of this technology to multi-carrier microwave power amplifiers is discussed, achieving state-of-the-art performance, with output powers of up to 120 W with 70% efficiency at 2.1 GHz.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
Snowden, CM
Date : June 2004
DOI : 10.1049/ip-cds:20040453
Contributors :
ContributionNameEmailORCID The Institution of Engineering and Technology,
Uncontrolled Keywords : MODEL, HEMTS
Additional Information :

Copyright 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Depositing User : Symplectic Elements
Date Deposited : 28 Nov 2011 14:57
Last Modified : 31 Oct 2017 14:14

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