Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
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Veal, T. D., Piper, L. F. J., Jefferson, P. H., Mahboob, I., McConville, C. F., Merrick, M., Hosea, T. J. C., Murdin, B. N. and Hopkinson, M. (2005) Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys Applied Physics Letters, 182114 (2005). ISSN 00036951
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Abstract
<p>Photoluminescence (PL) has been observed from dilute InN<i><sub>x</i></sub>As<sub>1–<i>x</i></sub> epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5×5) <b>k·p</b> Hamiltonian.</p>
| Item Type: | Article |
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| Additional Information: | T. D. Veal et al., Applied Phsyics Letters, 87, 182114(2005). Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1739 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 25 Apr 2013 12:43 |
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