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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Veal, T. D., Piper, L. F. J., Jefferson, P. H., Mahboob, I., McConville, C. F., Merrick, M., Hosea, T. J. C., Murdin, B. N. and Hopkinson, M. (2005) Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys Applied Physics Letters, 182114 (2005).


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<p>Photoluminescence (PL) has been observed from dilute InN<i><sub>x</i></sub>As<sub>1–<i>x</i></sub> epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5×5) <b>k·p</b> Hamiltonian.</p>

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
Veal, T. D.
Piper, L. F. J.
Jefferson, P. H.
Mahboob, I.
McConville, C. F.
Merrick, M.
Hosea, T. J.
Murdin, B.
Hopkinson, M.
Date : 28 October 2005
DOI : 10.1063/1.2126117
Additional Information : T. D. Veal et al., Applied Phsyics Letters, 87, 182114(2005). Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:44
Last Modified : 06 Jul 2019 05:07

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