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On the thermal stability of 1.3 mu m GaAsSb/GaAs-based lasers

Hild, K, Sweeney, SJ, Lock, DA, Wright, S, Wang, JB, Johnson, SR and Zhang, YH (2005) On the thermal stability of 1.3 mu m GaAsSb/GaAs-based lasers

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Abstract

In spite of the almost ideal variation of the radiative current of 1.3 mu m GaAsSb/GaAs-based lasers, the threshold current, J(th), is high due to non-radiative recombination accounting for 90% J(th) near room temperature. This also gives rise to low T-0 values similar to 60K close to room temperature, similar to that for InGaAsP/InP.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:44
Last Modified: 23 Sep 2013 18:34
URI: http://epubs.surrey.ac.uk/id/eprint/1734

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