On the thermal stability of 1.3 mu m GaAsSb/GaAs-based lasers
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Hild, K, Sweeney, SJ, Lock, DA, Wright, S, Wang, JB, Johnson, SR and Zhang, YH (2005) On the thermal stability of 1.3 mu m GaAsSb/GaAs-based lasers
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Abstract
In spite of the almost ideal variation of the radiative current of 1.3 mu m GaAsSb/GaAs-based lasers, the threshold current, J(th), is high due to non-radiative recombination accounting for 90% J(th) near room temperature. This also gives rise to low T-0 values similar to 60K close to room temperature, similar to that for InGaAsP/InP.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| ID Code: | 1734 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:44 |
| Last Modified: | 26 Oct 2012 17:14 |
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