Spin lifetime in InAs epitaxial layers grown on GaAs
Litvinenko, K. L., Murdin, B. N., Allam, J., Pidgeon, C. R., Zhang, T., Harris, J. J., Cohen, L. F., Eustace, D. A. and McComb, D. W. (2006) Spin lifetime in InAs epitaxial layers grown on GaAs Physical Review B, 74 (075331). ISSN 1098-0121Full text not available from this repository.
We report investigation of the spin relaxation in InAs films grown on GaAs at a temperature range from 77 K to 290 K. InAs is known to have a surface accumulation layer and the depth profile of the concentration and mobility is strongly nonuniform. We have correlated the spin relaxation with a multilayer analysis of the transport properties and find that the surface and the interface with the GaAs substrate both have subpicosecond lifetimes (due to the high carrier concentration), whereas the central semiconducting layer has a lifetime of an order of 10 ps. Even for the thickest film studied (1 micro-m, the semiconducting layer only carried 30% of the total current (with 10% through the interface layer and 60% through the surface accumulation layer). Designs for spintronic devices that utilize InAs, which is attractive due to its narrow gap and strong Rashba effect, will need to include strategies for minimizing the effects of the surface.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||29 August 2006|
|Identification Number :||10.1103/PhysRevB.74.075331|
|Additional Information :||Published in Physical Review B, 74, 075331. © 2006 The American Physical Society.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:44|
|Last Modified :||25 Apr 2013 11:43|
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