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SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers

Bain, M, El Mubarek, H A, Bonar, J M, Wang, Y, Buiu, O, Gamble, H, Armstrong, B M, Hemment, P L, Hall, S and Ashburn, P (2005) SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers IEEE Transactions on Electron Devices, 52 (3). ISSN 0018-9383

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Abstract

A technology is described for fabricating SiGe hetero-junction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance measurements as a function of bond temperature. Possible contamination issues associated with the buried tungsten silicide layer are investigated by measuring the collector/base reverse diode tics. A resistivity of 50 muOmegacm is obtained for the buried silicide layer for a bond anneal of 120 min at 1000 degreesC. Collector/base reverse diode ties show a voltage dependence of approximately V-1/2, indicating that the leakage current is due to Shockley-Read-Hall generation in the depletion region. Fitting of the current-voltage ties gives a generation lifetime of 90 ns, which is as expected for the collector doping of 7 x 10(17) cm(-3). These results indicate that the buried tungsten silicide layer does not have a serious impact on junction leakage.

Item Type: Article
Additional Information: Published in <i>Transactions on Electron Devices,</i> Vol. 52, Iss. 3. Copyright 2005 IEEE. Click <a href=http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16>here</a> to access the journal's website.
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:06
Last Modified: 23 Sep 2013 18:26
URI: http://epubs.surrey.ac.uk/id/eprint/168

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