High-Performance Thin-Film Transistors in Disordered and Poor-Quality Semiconductors
Shannon, J M and Balon, F (2007) High-Performance Thin-Film Transistors in Disordered and Poor-Quality Semiconductors IEEE Transactions on Electron Devices, 54 (2).
In general, the range of applications for large-area electronics or macroelectronics is limited by the quality of the semiconductor used to make the electronic devices and circuits. Here, we address the question of how to make high-performance transistors using semiconductors that are defective, have low carrier mobilities, and are unstable. It is proposed that we need to engineer and operate a transistor that minimizes the excess carrier concentration throughout the device. combined with high internal fields over small dimensions. Compared with the field-effect transistor, a source-gated transistor more nearly meets these requirements. Using the unstable and defective semiconductor, hydrogenated amorphous silicon, it is shown that high-performance thin-film transistors can indeed be made using the source-gated concept.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||1 January 2007|
|Identification Number :||https://doi.org/10.1109/TED.2006.888753|
|Additional Information :||Published in <i>Transactions on Electron Devices,</i> Vol. 54, Iss. 2. Copyright 2007 IEEE. Click <a href=http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:06|
|Last Modified :||23 Sep 2013 18:26|
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