High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3μm
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Choulis, S A, Andreev, A, Merrick, M, Adams, A R, Murdin, B N, Krier, A and Sherstnev, V V (2003) High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3μm Applied Physics Letters, 82 (8). pp. 1149-1151. ISSN 00036951
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Abstract
The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs
| Item Type: | Article |
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| Additional Information: | Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A., and Sherstnev, V. V. (2003) High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3&#956m. <i>Applied Physics Letters,</i> Vol. 82, No. 8, pp. 1149-1151 &copy2003 American Institute of Physics Click <a href=http://apl.aip.org/apl/>here</a> to visit the journal's website |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 1561 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:42 |
| Last Modified: | 25 Apr 2013 12:43 |
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