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High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3&#956m

Choulis, S A, Andreev, A, Merrick, M, Adams, A R, Murdin, B N, Krier, A and Sherstnev, V V (2003) High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3&#956m Applied Physics Letters, 82 (8). pp. 1149-1151. ISSN 00036951

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Abstract

The spontaneous electroluminescence emission of InAs light-emitting diodes (LEDs) operating at 3.3 μm was studied as a function of applied hydrostatic pressure. An enhancement of a factor of almost four in radiative efficiency at room temperature was observed in the range 0 to 10 kbar. Analysis of the dependence of electroluminescence emission intensity on hydrostatic pressure at constant current reveals that nonradiative Auger recombination dominates the quantum efficiency of these LEDs

Item Type: Article
Additional Information: Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A., and Sherstnev, V. V. (2003) High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3&amp;#956m. <i>Applied Physics Letters,</i> Vol. 82, No. 8, pp. 1149-1151 &amp;copy2003 American Institute of Physics Click <a href=http://apl.aip.org/apl/>here</a> to visit the journal's website
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:42
Last Modified: 23 Sep 2013 18:33
URI: http://epubs.surrey.ac.uk/id/eprint/1561

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