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Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots

Williams, DP, Andreev, AD, O'Reilly, EP and Faux, DA (2005) Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots PHYSICAL REVIEW B, 72 (23). ? - ?. ISSN 1098-0121

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Abstract

We present a simple analytical approach for the calculation of the built-in strain-induced and spontaneous potentials in nitride-based semiconductor quantum dots. We derive the built-in potentials and electric fields in terms of volume or surface integrals. We describe using a number of simplifying assumptions the general properties of piezoelectric and spontaneous fields in GaN/AlN and InN/GaN quantum dots and obtain analytic solutions to the potential along and close to the axis of symmetry in spherical, cylindrical, cuboidal, truncated-cone, and ellipsoidal dots. We show that the potential distribution in a hexagonal quantum dot is well represented by that of an equivalent dot with circular symmetry. We demonstrate that the built-in electric fields in nitride dots can provide a strong additional lateral confinement for carriers localized in the dot. This additional lateral confinement strongly modifies the electronic structure and optical properties of nitride-based quantum dot structures.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, STRAIN DISTRIBUTIONS, ELECTRONIC-STRUCTURE, III-NITRIDES, GAN, GROWTH, QDS
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Divisions: Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:06
Last Modified: 23 Sep 2013 18:26
URI: http://epubs.surrey.ac.uk/id/eprint/139

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