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Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots

Williams, DP, Andreev, AD, O'Reilly, EP and Faux, DA (2005) Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots PHYSICAL REVIEW B, 72 (23). ? - ?. ISSN 1098-0121

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmail
Williams, DPUNSPECIFIED
Andreev, ADUNSPECIFIED
O'Reilly, EPUNSPECIFIED
Faux, DAUNSPECIFIED
Date : 1 December 2005
Identification Number : 10.1103/PhysRevB.72.235318
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, STRAIN DISTRIBUTIONS, ELECTRONIC-STRUCTURE, III-NITRIDES, GAN, GROWTH, QDS
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 01 Mar 2015 02:36
URI: http://epubs.surrey.ac.uk/id/eprint/139

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