Semiconductor Microstructure in a Squeezed Vacuum: Electron-Hole Plasma Luminescence
Ginossar, E and Levit, S (2005) Semiconductor Microstructure in a Squeezed Vacuum: Electron-Hole Plasma Luminescence Physical Review B (Condensed Matter and Materials Physics), 72 (7).
PhysRevB.72.075333.pdf - Published Version
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We consider a semiconductor quantum-well placed in a wave guide microcavity and interacting with the broadband squeezed vacuum radiation, which fills one mode of the wave guide with a large average occupation. The wave guide modifies the optical density of states so that the quantum well interacts mostly with the squeezed vacuum. The vacuum is squeezed around the externally controlled central frequency $\om_0$, which is tuned above the electron-hole gap $E_g$, and induces fluctuations in the interband polarization of the quantum-well. The power spectrum of scattered light exhibits a peak around $\om_0$, which is moreover non-Lorentzian and is a result of both the squeezing and the particle-hole continuum. The squeezing spectrum is qualitatively different from the atomic case. We discuss the possibility to observe the above phenomena in the presence of additional non-radiative (e-e, phonon) dephasing.
|Additional Information:||Copyright 2005 The American Physical Society.|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Depositing User:||Symplectic Elements|
|Date Deposited:||08 Dec 2011 14:19|
|Last Modified:||23 Sep 2013 18:52|
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