Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication
Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2011) Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication ECS Transactions, 37 (1). pp. 57-63.
ECS 2011 Symplectic .pdf - Accepted version Manuscript
Available under License : See the attached licence file.
Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, which control the current. The paper describes how SGTs can be optimized for particular applications and for specific semiconductor material systems. It is shown how the saturation voltage can be designed to be an order of magnitude smaller than in equivalent FETs to give power savings of over 50% for the same current output. The SGT also achieves a better saturation regime, with lower output conductance over a larger range of drain voltages. Flat-panel lighting, remote sensing and signal processing and large-area circuits made using inexpensive but imprecise patterning techniques are some of the applications which could benefit from incorporating these devices.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||1 July 2011|
|Identification Number :||https://doi.org/10.1149/1.3600724|
|Additional Information :||© The Electrochemical Society, Inc. . All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 37(1), 57-63.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||25 Jan 2012 01:03|
|Last Modified :||23 Sep 2013 19:03|
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