Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication

Sporea, RA, Guo, X, Shannon, JM and Silva, SRP (2011) Source-Gated Transistors for Versatile Large Area Electronic Circuit Design and Fabrication ECS Transactions, 37 (1). pp. 57-63.

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Abstract

Source-gated transistors (SGTs) comprise a blocking contact or potential barrier at the source, which control the current. The paper describes how SGTs can be optimized for particular applications and for specific semiconductor material systems. It is shown how the saturation voltage can be designed to be an order of magnitude smaller than in equivalent FETs to give power savings of over 50% for the same current output. The SGT also achieves a better saturation regime, with lower output conductance over a larger range of drain voltages. Flat-panel lighting, remote sensing and signal processing and large-area circuits made using inexpensive but imprecise patterning techniques are some of the applications which could benefit from incorporating these devices.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Authors Email ORCID Sporea, RA UNSPECIFIED UNSPECIFIED Guo, X UNSPECIFIED UNSPECIFIED Shannon, JM UNSPECIFIED UNSPECIFIED Silva, SRP UNSPECIFIED UNSPECIFIED
Date :	1 July 2011
Identification Number :	10.1149/1.3600724
Contributors :	Contribution Name Email ORCID Editor Kuo, Y UNSPECIFIED UNSPECIFIED Editor Bersuker, G UNSPECIFIED UNSPECIFIED
Additional Information :	© The Electrochemical Society, Inc. [2011]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 37(1), 57-63.
Depositing User :	Symplectic Elements
Date Deposited :	25 Jan 2012 01:03
Last Modified :	23 Sep 2013 19:03
URI:	http://epubs.surrey.ac.uk/id/eprint/129075

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