High-resolution temperature sensing with source-gated transistors
Sporea, RA, Shannon, JM and Silva, SRP (2011) High-resolution temperature sensing with source-gated transistors Device Research Conference (DRC), 2011 69th Annual . 61 - 62. ISSN 1548-3770
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Official URL: http://dx.doi.org/10.1109/DRC.2011.5994463
Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a potential barrier at the source. The gate voltage is used primarily to modulate the effective height of the source barrier. These devices have a number of operational advantages over conventional field-effect transistors, including a potentially much smaller saturation voltage and very low output conductance in saturation, which lead to low power operation and high intrinsic gain.
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|Uncontrolled Keywords:||thin film transistors, temperature sensors, polysilicon, low-power electronics|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Symplectic Elements|
|Deposited On:||21 Jan 2012 12:40|
|Last Modified:||24 Jan 2013 09:25|
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