High-resolution temperature sensing with source-gated transistors
Sporea, RA, Shannon, JM and Silva, SRP (2011) High-resolution temperature sensing with source-gated transistors Device Research Conference (DRC), 2011 69th Annual. pp. 61-62.
DRC 2011 Sporea v4.pdf - Accepted version Manuscript
Available under License : See the attached licence file.
Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a potential barrier at the source. The gate voltage is used primarily to modulate the effective height of the source barrier. These devices have a number of operational advantages over conventional field-effect transistors, including a potentially much smaller saturation voltage and very low output conductance in saturation, which lead to low power operation and high intrinsic gain.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||22 June 2011|
|Identification Number :||10.1109/DRC.2011.5994463|
|Uncontrolled Keywords :||thin film transistors, temperature sensors, polysilicon, low-power electronics|
|Additional Information :||
Copyright 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
|Depositing User :||Symplectic Elements|
|Date Deposited :||21 Jan 2012 12:40|
|Last Modified :||23 Sep 2013 19:03|
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