High-resolution temperature sensing with source-gated transistors
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Sporea, RA, Shannon, JM and Silva, SRP (2011) High-resolution temperature sensing with source-gated transistors Device Research Conference (DRC), 2011 69th Annual . 61 - 62. ISSN 1548-3770
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Official URL: http://dx.doi.org/10.1109/DRC.2011.5994463
Abstract
Source-gated transistors (SGTs) are three-terminal devices in which the current is controlled by a potential barrier at the source. The gate voltage is used primarily to modulate the effective height of the source barrier. These devices have a number of operational advantages over conventional field-effect transistors, including a potentially much smaller saturation voltage and very low output conductance in saturation, which lead to low power operation and high intrinsic gain.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Uncontrolled Keywords: | thin film transistors, temperature sensors, polysilicon, low-power electronics |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre |
| ID Code: | 129074 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 21 Jan 2012 12:40 |
| Last Modified: | 24 Jan 2013 09:25 |
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