Total dielectric isolation (TDI) of silicon device islands by a single O+implantation stage
Robinson, A. K., Reeson, K. J., Hemment, P. L. F., Thomas, N., Davis, J. R., Christensen, K. N., Marsh, C., Booker, G. R., Kilner, J. A. and Chater, R. J. (1988) Total dielectric isolation (TDI) of silicon device islands by a single O+implantation stage IEEE Proceedings of the 1988 SOS/SOI Technology Workshop.
It has recently been shown that SIMOX (separation by implantation of oxygen) technology can be extended to provide both vertical and lateral isolation of device islands by a single implantation stage. This technology (TDI) entails implantation of O+ ions through a deposited masking layer of SiO2 in which windows are opened to define the silicon device islands. However, the structures had detrimental characteristics (e.g. nonplanar surfaces and entrapped silicon islands in the synthesized SiO2) that detracted from the utility of the technique. A process is reported that produces improved structures, which are suitable for application to circuits.
|Additional Information:||Robinson, A.K., Reeson, K.J., Hemment, P.L.F., Thomas, N., Davis, J.R., Christensen, K.N., Marsh, C., Booker, G.R., Kilner, J.A., & Chater, R.J. (1988). Total dielectric isolation (TDI) of silicon device islands by a single O+ implantation stage. IEEE Proceedings of the 1988 SOS/SOI Technology Workshop (3-5 Oct 1988), p. 60. © 1988 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:32|
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