Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers
Vyatkin, A. F., Avrutin, V. S., Izyumskaya, N. F., Egorov, V. K., Starkov, V. V., Zinenko, V. I., Smirnova, I. A., Hemment, Peter L. F., Nejim, A., Vdovin, V. I. and Yugova, T. G. (2000) Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers Conference on Ion Implantation Technology, 2000.. pp. 70-72.
The effects of irradiation with Ge+ and Ar+ ions at elevated temperatures on the relaxation behavior of pseudomorphic Si0.79Ge0.21/Si heterostructures have been compared. It was found the strain relaxation in the structures implanted with Ge+ at 400°C started already upon implantation, post-implantation thermal annealing of this sample resulted in considerably higher degree of relaxation than that in control (non-implanted) samples as well as in samples implanted with Ar+ both at 230 and 4000°C and with Ge+ at 230°C. This result points to a dramatic influence of both the implantation temperature and ion species on relaxation behavior of the ion-irradiated heterostructure. Two possible mechanisms for this effect are discussed.
|Additional Information:||Vyarkin, A.F.; Avrutin, V.S.; Izyumskaya, N.F.; Egorov, V.K.; Starkov, V.V.; Zinenko, V.I.; Smirnova, I.A.; Hemment, P.L.F.; Nejim, A.; Vdovin, V.I.; Yugova, T.G.; Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers. Conference on Ion Implantation Technology, 2000. 70 - 72. © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:32|
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