Formation of oxidation induced stacking sacrificial thinning of SIMOX materials
Giles, L. F., Nejim, A., Marsh, C. D., Hemment, P. L. F. and Booker, G. R. (1993) Formation of oxidation induced stacking sacrificial thinning of SIMOX materials Proceedings of the 1993 International SOI Conference. pp. 54-55.
Sacrificial thermal oxidation of standard SIMOX is currently the main route to form ultra thin film SIMOX structures. During the oxidation process self interstitials are injected into the silicon overlayer and these point defects can lead to the growth of secondary defects, in particular oxidation induced stacking faults (OISF). The formation of these OISF is influenced by the presence of stacking fault tetrahedra (SFT) in the silicon overlayer. In this paper we investigate the formation of OISF using transmission electron microscopy (TEM) and a recently developed chemical defect etchant. We propose a model which describes the evolution of OISF from the existing SFT.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||5 October 1993|
|Additional Information :||Giles, L.F., Nejim, A., Marsh, C.D., Hemment, P.L.F., & Booker, G.R. (1993). Formation of oxidation induced stacking sacrificial thinning of SIMOX materials. Proceedings of the 1993 International SOI Conference, (5-7 Oct.) pp. 54 - 55. © 1993 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:39|
|Last Modified :||23 Sep 2013 18:32|
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