Josephson effects in MgB2 metal masked ion damage junctions
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Kang, DJ, Peng, NH, Jeynes, C, Webb, R, Lee, HN, Oh, B, Moon, SH, Burnell, G, Stelmashenko, NA, Tarte, EJ, Moore, DF and Blamire, MG (2003) Josephson effects in MgB2 metal masked ion damage junctions In: Applied Superconductivity Conference, 2002-08-04 - 2002-08-09, HOUSTON, TEXAS.
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Abstract
We have successfully fabricated high quality Josephson junctions in MgB2 thin films by a combination of 30 kV focused Ga ion beam nanolithography and 50 keV proton ion beam irradiation. The junctions show resistively shunted junction like current-voltage characteristics with additional excess current. Monte Carlo simulation results for the optimized mask structure and experimental results for the dc and ac Josephson effects are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics, focused ion beam, ion implantation, Josephson effects, nanotechnology, MAGNESIUM-DIBORIDE, THIN-FILMS, YBA2CU3O7-DELTA, IMPLANTATION, IRRADIATION, BEAM |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre |
| Related URLs: | |
| ID Code: | 1280 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:39 |
| Last Modified: | 18 Apr 2013 14:33 |
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