Ion implantation induced damage in relaxed Si1-xGex
Barklie, R. C., O'Raifeartaigh, C., Nylandsted-Larsen, A., Priolo, F., Lulli, G., Grob, J. J., Mesli, A., Lindner, J. K. N., Cristiano, F. and Hemment, P. L. F. (1996) Ion implantation induced damage in relaxed Si1-xGex Proceedings of the 11th International Conference on Ion Implantation Technology .
Relaxed Si1-xGex layers with germanium contents of 0.04, 0.13, 0.24 and 0.36 have been grown by MBE and implanted under tightly controlled conditions with 2 MeV Si+ ions over the dose range 1×1010 to 5×1010 Si+ cm-2. The introduction rate and characteristics of simple defects have been investigated by EPR and DLTS whilst the accumulation of this damage with increasing dose has been followed by RBS, XTEM and optical depth profiling up to the onset of amorphisation. It is found that the integrated damage increases whilst the critical dose for amorphisation decreases with increasing Ge content.
|Additional Information:||Barklie, R.C., O'Raifeartaigh, C., Nylandsted-Larsen, A., Priolo, F., Lulli, G., Grob, J.J., Mesli, A., Lindner, J.K.N., Cristiano, F., & Hemment, P.L.F. (1996). Ion implantation induced damage in relaxed Si1-xGex. Proceedings of the 11th International Conference on Ion Implantation Technology, 16-21 June 1996, pp. 698 - 701. © 1996 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:39|
|Last Modified:||26 Oct 2012 16:27|
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