Dopant redistribution and activation in thin film SOI/SIMOX substrates
Robinson, A. K., Bussman, U., Hemment, P. L. F., Sharma, V. and Kilner, J. A. (1990) Dopant redistribution and activation in thin film SOI/SIMOX substrates 1990 IEEE SOS/SOI Technology Conference. pp. 71-72.
Experiments were performed to determine the transport properties, electrical activity, and redistribution of dopants implanted into SIMOX samples with different silicon layer thicknesses. High temperature annealed SIMOX samples with silicon film thicknesses of 2000 Å (SIMOX1) and 3000 Å (SIMOX2) were implanted with As+, Sb+, B+, and P+ ions. Activation of the dopant was achieved by annealing samples at either 950°C or 1150°C in flowing nitrogen gas in a resistivity heated furnace. Temperature dependence of the sheet resistance following As+ ion implantation into the same set of samples is presented. The main difference is seen above 800°C when significant. As diffusion occurs, which leads to uniform doping in the silicon layer and a value of sheet resistance which is temperature independent above 1000°C.
|Additional Information:||Robinson, A.K., Bussmann, U., Hemment, P.L.F., Sharma, V., & Kilner, J.A. (1990). Dopant redistribution and activation in thin film SOI/SIMOX substrates. 1990 IEEE SOS/SOI Technology Conference (2-4 Oct. 1990), pp. 71 - 72. © 1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:32|
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