An Effective Electrical Isolation Scheme by Iron Implantation at Different Substrate Temperatures
Too, P, Ahmed, S, Sealy, B J and Gwilliam, R (2002) An Effective Electrical Isolation Scheme by Iron Implantation at Different Substrate Temperatures In: SCS 2003. International Symposium on Signals, Circuits and Systems. Proceedings (Cat. No.03EX720).
High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100degreesC and 200degreesC was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5 x 10(14) /cm(2). This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R,), sheet carrier concentration (n(S)) and sheet mobility (p) were measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800degreesC). Samples implanted at 77K, RT and 100degreesC show more or less the same trend of postimplant annealing characteristics. A maximum sheet resistivity of similar to1 x 10(7) Omega/rectangle was achieved for samples implanted at 77K, RT and 100degreesC after annealing at 400degreesC. A lower resistivity of similar to1 x 10(6) Omega/rectangle was obtained for a 200degreesC implant after annealing at 4000C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200degreesC substrate temperature, annealing above 4000C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures. The sheet resistivity was increased again for 77K, RT and 100()C implant after annealing at 600degreesC. We infer that for 77K, RT and 100degreesC implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200degreesC substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.
|Item Type:||Conference or Workshop Item (UNSPECIFIED)|
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||1 January 2002|
|Identification Number :||https://doi.org/10.1109/IIT.2002.1258079|
|Additional Information :||Too, P., Ahmed, S., Sealy, B. J., and Gwilliam, R. (2002). An Effective Electrical Isolation Scheme by Iron Implantation at Different Substrate Temperatures. Proceedings of the 14th International Conference on Ion Implantation Technology, pp. 610-613. ©2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:39|
|Last Modified :||23 Sep 2013 18:32|
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