SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation
Graouil, H., Nejim, A., Hemment, Peter L. F., Riley, L., Hall, S., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation Conference on Ion Implantation Technology, 2000. pp. 38-41.
SiGe device islands have been synthesised by Ge+ ion implantation of doses of 0.45×1016Ge+/cm2 to 4.05×1016Ge+/cm2 at 100 keV or 200 keV into patterned (100) bulk silicon wafers. The control of `mask edge defects ' and `end of range ' defects has been achieved by applying Si+ post-amorphisation, where the ions are implanted into a wider window, and by using solid phase epitaxial regrowth. Defect free SiGe alloy islands with a peak Ge concentration of ~6 at% and minority carrier generation lifetimes comparable to bulk silicon (~micro-s) have been successfully produced. The integration of this synthesis process into CMOS and bipolar technologies is discussed. Realization of shallower islands, with dimensions more consistent with future generations of advanced devices and with higher Ge contents, is in hand.
|Additional Information:||Graouil, H.; Nejim, A.; Hemment, P.L.F.; Riley, L.; Hall, S.; Mitchell, M.; Ashburn, P. SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation. Conference on Ion Implantation Technology, 2000, 38-41. © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Depositing User:||Mr Adam Field|
|Date Deposited:||27 May 2010 14:39|
|Last Modified:||23 Sep 2013 18:32|
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