A new determination method of very low Fe contamination by UFS
Lu, Dian-Tong, Qingcheng, Zheng, Mitchell, Ian V., Hemment, P. L. F. and Ryssel, H. (1995) A new determination method of very low Fe contamination by UFS 4th International Conference on Solid-State and Integrated Circuit Technology .
We have produced very low Fe-dose (108-109 Fe/cm2) implanted Si samples. A new method of Ultraviolet Fluorescence Spectra (UFS) measurements has been used to determine the contents of Fe on the surfaces of Fe-implanted samples. We find that the Fe-impurities have their own ultraviolet fluorescent peak wavelength at room temperature and their characteristic spectral peak intensities are proportional to the Fe-doses (Fe-concentrations) in Fe implanted Si samples. This method is very sensitive, efficient and nondestructive for testing the Fe contamination on silicon. Some SOI (Silicon on Insulator) wafers and VLSI chips were evaluated with the UFS method. The results indicate that the UFS method is able to measure the very low Fe-contamination. The limit is below (108-109) Fe/cm2 or (1013-1014) Fe/cm3 in Si samples.
|Additional Information:||Dian-Tong, L., Qingcheng, Z., Mitchell, I.V., Hemment, P.L.F., & Ryssel, H. (1995). A new determination method of very low Fe contamination by UFS. 4th International Conference on Solid-State and Integrated Circuit Technology, 24-28 Oct. 1995, pp. 757 - 759. © 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Deposited By:||Mr Adam Field|
|Deposited On:||27 May 2010 15:39|
|Last Modified:||26 Oct 2012 16:27|
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