Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation
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Marsh, C. D., Booker, G. R., Nejim, A., Giles, L. F., Hemment, P. L. F., Li, Y., Chater, R. J., Kilner, J. A., Wainwright, S. and Hall, S. (1992) Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation Proceedings of the 1992 International SOI Conference . pp. 6-8.
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| Item Type: | Article |
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| Additional Information: | Marsh, C.D., Booker, G.R., Nejim, A., Giles, L.F., Hemment, P.L.F., Li, Y., Chater, R.J., Kilner, J.A., Wainwright, S., Hall, S. (1992). Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation. Proceedings of the 1992 International SOI Conference, (October 6-8), pp. 8-9. © 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre |
| ID Code: | 1272 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:39 |
| Last Modified: | 26 Oct 2012 16:27 |
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