SiGe HBTs on bonded SOI incorporating buried silicide layers
Bain, M., El Mubarek, A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B. M., Hemment, P. L. F., Hall, Steven and Ashburn, Peter (2005) SiGe HBTs on bonded SOI incorporating buried silicide layers IEEE Transactions on Electron Devices. pp. 317-324.
A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance measurements as a function of bond temperature. Possible contamination issues associated with the buried tungsten silicide layer are investigated by measuring the collector/base reverse diode tics. A resistivity of 50 µΩcm is obtained for the buried silicide layer for a bond anneal of 120 min at 1000 °C. Collector/base reverse diode tics show a voltage dependence of approximately V1/2, indicating that the leakage current is due to Shockley-Read-Hall generation in the depletion region. Fitting of the current-voltage tics gives a generation lifetime of 90 ns, which is as expected for the collector doping of 7 x 1017 cm-3. These results indicate that the buried tungsten silicide layer does not have a serious impact on junction leakage.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||1 March 2005|
|Uncontrolled Keywords :||buried layer, SiGe heterojunction bipolar transistors (HBTs), groundplane, silicon-on-insulator (SOI), tungsten, silicide, wafer bonding|
|Additional Information :||Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S.,& Ashburn, P. (2005). SiGe HBTs on bonded SOI incorporating buried silicide layers. IEEE Transactions on Electron Devices, 52, 317-324. © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:39|
|Last Modified :||23 Sep 2013 18:32|
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